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Department
Thin Films Process Engineering (Chemical Vapor Deposition)
Project Title
Crater Defect Reduction in Tetraethyl Orthosilicate (TEOS) Chemical Vapor Deposition Process
Project Description
Crater defects observed in the Tetraethyl Orthosilicate (TEOS) Chemical Vapor Deposition (CVD) process pose yield and integration risks in high‑volume semiconductor manufacturing. This internship project focuses on developing a structured understanding of crater defect mechanisms by integrating process knowledge, chamber condition review, and manufacturing data analytics.
The intern will work on a defined engineering problem and apply data‑driven methodologies and controlled experimentation to identify defect contributors and evaluate improvement opportunities within the Fab10 TEOS CVD process.
Objective of the Project
- Build a fundamental understanding of the TEOS CVD process flow and chamber condition effects
- Apply data analysis techniques to characterize crater defect signatures and trends
- Develop hypothesis‑driven insights linking process conditions to defect formation
- Evaluate defect reduction opportunities while maintaining critical film performance requirements
Project Scope
- Study TEOS CVD process flow, equipment configuration, and chamber condition history
- Analyze inline defect inspection data and yield data to characterize crater defect patterns
- Perform structured data analysis to identify key process and equipment variables correlated with defects
- Conduct limited, well‑defined experiments (DOE or split runs) under Process Engineering Excellence (PEE) guidance
- Assess defect improvement results against key film performance metrics (e.g., thickness, uniformity, electrical properties)
Learning Opportunities
- Hands‑on exposure to semiconductor thin‑film CVD processes in a high‑volume manufacturing environment
- Application of structured problem‑solving and statistical data analysis in real manufacturing scenarios
- Experience in defect characterization, DOE methodology, and engineering trade‑off evaluation
- Development of technical communication skills through data reviews and project presentations
Deliverables
- Defect characterization summary with data‑driven insights on crater defect mechanisms
- Analysis package correlating process parameters and chamber conditions to defect behavior
- Experimental results demonstrating defect reduction opportunities with assessment of impact on critical film metrics
- Final technical presentation and written summary documenting findings and recommendations
Impact of Project
- Identification of actionable defect reduction opportunities for the TEOS CVD process
- Improved understanding of process‑defect interactions to support yield and integration robustness
- Reusable analytical framework for future defect investigations
Skillset Required
- Data analysis and basic statistical analysis skills
- Structured problem‑solving mindset
- Ability to work with large datasets and derive engineering insights
- Clear written and verbal technical communication skills
- Strong curiosity and willingness to learn semiconductor manufacturing processes
Course of Interest
Chemical Engineering, Materials Science, Electrical Engineering, Mechanical Engineering, Data Analytics, or related engineering disciplines
Duration Period: Min 6 months (Semester Internship from July 2026 to December 2026)
About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.
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